Ultimate-low-k SiOCH film (k=3D1.3) with sufficient modulus (>5 GPa) and ultra-high thermal stability formed by low-temperature pulse-time-modulated neutral-beam-enhanced CVD, Interconnect Technology Conference (IITC), 2010 International, Yasuhara, S. ; Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan ; Sasaki, T. ; Shimayama, T. ; Tajima, K. more authors
Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD, Interconnect Technology Conference, 2008. IITC 2008. International, Yasuhara, S. ; Institute of Fluid Science, Tohoku University ; Chung, Juhyun ; Tajima, K. ; Yano, H. more authors
Tribological characterization of boron nitride films against, 11th International Conference on Technology of Plasticity, ICTP 2014, 19-24 October 2014, Yong Jina, Shigeo Yasuhara, Tetsuhide Shimizu, Nagoya Congress Center, Nagoya, Japan pure-titanium for microforming die application, Ming Yanga
Fabrication and Investigation of new amino-silane precursor(BEMAS) for low temperature deposition of SiO and SiN, ADMETA 2008, S. Nozu, S. Yasuhara, K. Endo
A method of forming Si-CH2 in low-k SiC barrier dielectrics using BTMSA (Bis-trim ethylsilylacetylene), ADMETA 2005, Shigeo Yasuhara, Kazuhiko Endo