Atomic Layer Deposition (ALD) is a thin film deposition method in which a film is grown on a substrate by exposing its surface to precursors.
1) One precursor has adsorbed to the surface.
2) Excess of molecules is removed.
3) Then, use another precursor to create new layer on the surface, and the excess will be removed.
These processes are repeated until desired thickness is obtained.
【Advantage of ALD】
- Excellent film control in microscopic area such as nanometers.
- Excellent uniformity, and excellent step coverage characteristics.
- Films without pinhole.
- Low deposition temperature.
ALD process has been applied for various fields, including semiconductor, compound semiconductor, MEMS/NEM, optical thin film, laser thin film, coating, corrosion prevention, renewable energy such as solar cell etc., medical device, biomaterial, moisture protection barrier, coating of accessory, over-coating for glass etc.