A method of forming Si-CH2 in low-k SiC barrier dielectrics using BTMSA (Bis-trim ethylsilylacetylene)

A method of forming Si-CH2 in low-k SiC barrier dielectrics using BTMSA (Bis-trim ethylsilylacetylene), ADMETA 2005, Shigeo Yasuhara, Kazuhiko Endo